Campus Units

Aerospace Engineering

Document Type

Article

Publication Version

Published Version

Publication Date

2008

Journal or Book Title

Applied Physics Letters

Volume

93

First Page

041901-1

Last Page

041901-3

DOI

10.1063/1.2961006

Abstract

Residual electrical resistivitymeasurement is employed to study dislocation storage under tensile loading of freestanding electroplated Cufilms (1–5μm grain size and 2–50μm thickness). The results indicate that the nature of thickness effects (strengthening or weakening) depends on the underlying deformation mechanisms via the average grain size. A threshold grain size of about dg=5μm is identified to distinguish grain size effects in thicker films from those in thinner films. For dg>5μm, diminishing microstructural constraint with reduced thickness weakens the films due to dislocation annihilation near the free surface. For dg<5μm, reduction of film thickness leads to strengthening via grain boundary-source starvation.

Comments

The following article appeared in Applied Physics Letters 93 (2008): 041901 and may be found at doi: 10.1063/1.2961006.

Rights

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Copyright Owner

American Institute of Physics

Language

en

File Format

application/pdf

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