Campus Units

Physics and Astronomy, Aerospace Engineering, Mechanical Engineering, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

9-2002

Journal or Book Title

Applied Physics Letters

Volume

81

Issue

10

First Page

1875

Last Page

1877

DOI

10.1063/1.1505113

Abstract

With an aim to understanding the fundamental mechanisms underlying chemical mechanical planarization ~CMP! of copper, we simulate the nanoscale polishing of a copper surface with molecular dynamics utilizing the embedded atom method. Mechanical abrasion produces rough planarized surfaces with a large chip in front of the abrasive particle, and dislocations in the bulk of the crystal. The addition of chemical dissolution leads to very smooth planarized copper surfaces and considerably smaller frictional forces that prevent the formation of bulk dislocations. This is a first step towards understanding the interplay between mechanistic material abrasion and chemical dissolution in chemical mechanical planarization of copper interconnects.

Comments

The following article appeared in Applied Physics Letters 81, 10 (2002): 1875 and may be found at doi: 10.1063/1.1505113.

Rights

Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Copyright Owner

American Institute of Physics

Language

en

File Format

application/pdf

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