Document Type

Conference Proceeding

Conference

Recent Developments in Oxide and Metal Epitaxy: Proceedings of the MRS 2000 Spring Meeting

Publication Date

2000

DOI

10.1557/PROC-619-15

City

Warrendale, PA

Abstract

Metal(100) homoepitaxial systems constitute perhaps the simplest class of systems in which to study thin film growth. Yet, our Variable-Temperature Scanning Tunneling Microscopy (VTSTM) analysis of Ag/Ag(100) homoepitaxy reveals that the variation of roughness with temperature is extraordinarily complex. As the deposition temperature is reduced from 300K to 50K, the roughness of 25 monolayer films first increases, then decreases, and then increases again. Furthermore, a transition from mound formation to self-affine (semi-fractal) growth occurs at around 135K. We postulate that the following the atomistic mechanisms underly this behavior: the existence of a small step-edge barrier inhibiting diffusive downward transport; “downward funneling” of atoms deposited at step edges and microprotrusions towards lower four-fold hollow adsorption sites; and statistically significant deviations from “complete” downward funneling at lower temperatures, where deposited atoms instead become trapped on the sides of (the more prevalent) small steep microprotrusions. To support these postulates, we employ kinetic Monte Carlo simulations to show that atomistic (lattice-gas) models for epitaxial growth, which incorporate these mechanisms, reproduce the experimental data quantitatively.

Comments

This article is from Recent Developments in Oxide and Metal Epitaxy: Proceedings of the MRS 2000 Spring Meeting 619 (2000): pp. 15—26, doi:10.1557/PROC-619-15

Copyright Owner

Materials Research Society

Language

en

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