Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

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2015-01-01
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Lograsso, Thomas
Dennis, Kevin
McCallum, R. William
Jiles, David
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Hadimani, Ravi
Affiliate Assistant Professor
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Lograsso, Thomas
Ames Laboratory Division Director
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Schlagel, Deborah
Assistant Scientist III
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Jiles, David
Distinguished Professor Emeritus
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Electrical and Computer Engineering
Abstract

Gd5(Six Ge 1−x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3 Ge 2.7 and Gd5Si1.4 Ge 2.6. We have investigated the first order and second orderphase transition temperatures of these samples using magnetic moment vs. temperature andmagnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

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The following article appeared in J. Appl. Phys. 117, 17D106 (2015) and may be found at http://dx.doi.org/10.1063/1.4907190.

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Thu Jan 01 00:00:00 UTC 2015
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