An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor
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2019-01-01
Authors
Effler, Richard
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Reza Montazami
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Mechanical Engineering
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Mechanical Engineering
Abstract
An ionic circuit analogous to a traditional metal-oxide semiconductor was investigated, using 1-ethyl-3-methylimidazolium trifluoromethanesulfonate as the ionic liquid in the gating element. The circuit was observed to perform with comparatively high threshold and overdrive voltages in a region below the saturation current of the transistor. The concept of the design was successfully verified, although further improvements in electrode positioning and manufacturing precision are warranted.
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Thu Aug 01 00:00:00 UTC 2019