Document Type

Patent

Publication Date

2-3-1987

Abstract

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/

Patent Number

US 4,640,756

ISURF Reference Number

1011

Assignee

The United States of America as represented by the United States Department of Energy

Application Number

US 06/736,164

Date Filed

5-20-1985

Language

en

File Format

application/pdf

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