An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/
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The United States of America as represented by the United States Department of Energy
Wang, Jin S.; Lakin, Kenneth M.; and Landin, Allen R., "Method of making a piezoelectric shear wave resonator" (1987). Iowa State University Patents. 134.