Document Type

Patent

Publication Date

8-3-1993

Abstract

A method for forming thin films of dielectric material which exhibit improved quality and piezoelectric response, which are formed in a DC magnetron reactive sputtering system. The dielectric material is deposited onto a substrate, and the deposition is interrupted before a highly insulating film is grown on the chamber interior. Then, the reactive gas is removed from the chamber and replaced with an inert gas, and a layer of metal is deposited on the chamber interior. This deposition of a metal layer conceals the highly insulating film on the chamber interior thereby improving the quality and piezoelectric response of the dielectric thin films. During the step of depositing a metal layer, the deposited substrate is shielded in order to prevent metal from being deposited on the substrate. Then, the deposition of dielectric material on the substrate and deposition of the metal layer on the chamber interior is repeatedly alternated until a desired thickness of the dielectric thin film has been reached.

Patent Number

US 5,232,571

ISURF Reference Number

1506

Assignee

Iowa State University Research Foundation, Inc.,

Application Number

US 07/813,101

Date Filed

12-23-1991

Language

en

File Format

application/pdf

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