Document Type

Patent

Publication Date

12-24-1991

Abstract

A cointegrated high frequency oscillator including a thin film resonator and activedevices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.

Patent Number

Us 5,075,641

Assignee

Iowa State University Research Foundation, Inc.

Application Number

622,251

Date Filed

12-4-1990

Language

en

File Format

application/pdf

EP0560925B1.pdf (439 kB)
EP 0 560 925 B1

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