Document Type

Patent

Publication Date

10-15-1991

Abstract

A high power semiconductor device with integral heat sink capable of accommodating substantial heat flux on the order of one kw per cm.sup.2. Theintegral heat sink is formed on the active surface of the semiconductor and utilizes an AlN thin film of high purity to provide a low thermal impedance heatconductor for removing heat directly from the active semiconductor surface. A microchannel heat sink is formed on the A1N thin film and has a source of cooling fluid flowing through the microchannel heat sink for conducting heat away from thesink. The result is the ability to conduct large heat fluxes away from the intimately contacted heat generating semiconductor surface to the cooling fluid in the microchannel heat sink and thus operate the semiconductor under substantially higher power than has been practical heretofore in a device of such simplicity.

Patent Number

5,057,908

Assignee

Iowa State University Research Foundation, Inc.

Application Number

550,863

Date Filed

7-10-1990

Language

en

File Format

application/pdf

EP0466363A1.pdf (321 kB)
EP 0 466 363 A1

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