A high power semiconductor device with integral heat sink capable of accommodating substantial heat flux on the order of one kw per cm.sup.2. Theintegral heat sink is formed on the active surface of the semiconductor and utilizes an AlN thin film of high purity to provide a low thermal impedance heatconductor for removing heat directly from the active semiconductor surface. A microchannel heat sink is formed on the A1N thin film and has a source of cooling fluid flowing through the microchannel heat sink for conducting heat away from thesink. The result is the ability to conduct large heat fluxes away from the intimately contacted heat generating semiconductor surface to the cooling fluid in the microchannel heat sink and thus operate the semiconductor under substantially higher power than has been practical heretofore in a device of such simplicity.
Iowa State University Research Foundation, Inc.
Weber, Robert J., "High power semiconductor device with integral heat sink" (1991). Iowa State University Patents. 77.