Document Type

Article

Publication Date

1-1969

Journal or Book Title

Physical Review

Volume

177

Issue

3

First Page

1231

Last Page

1234

DOI

10.1103/PhysRev.177.1231

Abstract

Infrared reflectivity measurements have been made at 78°K on three samples of GaAs, doped with Te so that the plasma frequency is nearly equal to the long-wavelength LO phonon frequency. There are two prominent dips in the reflectivity spectra, but instead of occurring near the plasma frequency and LO mode frequency, they occur at the frequencies of the two normal modes of the coupled plasmon-LO-phonon system, as predicted by Varga and by Singwi and Tosi. From the reflectivity spectra at 78°K, values of the electron effective mass of 0.067, 0.073, and 0.077me are obtained for n-type GaAs with 7.22×1017, 8.75×1017, and 14.0×1017 carriers per cm3.

Comments

This article is from Physical Review 177 (1969): 1231, doi:10.1103/PhysRev.177.1231. Posted with permission.

Copyright Owner

The American Physical Society

Language

en

File Format

application/pdf

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