Physics and Astronomy, Aerospace Engineering, Mechanical Engineering, Ames Laboratory
Journal or Book Title
Applied Physics Letters
With an aim to understanding the fundamental mechanisms underlying chemical mechanical planarization ~CMP! of copper, we simulate the nanoscale polishing of a copper surface with molecular dynamics utilizing the embedded atom method. Mechanical abrasion produces rough planarized surfaces with a large chip in front of the abrasive particle, and dislocations in the bulk of the crystal. The addition of chemical dissolution leads to very smooth planarized copper surfaces and considerably smaller frictional forces that prevent the formation of bulk dislocations. This is a first step towards understanding the interplay between mechanistic material abrasion and chemical dissolution in chemical mechanical planarization of copper interconnects.
Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
American Institute of Physics
Ye, Y.; Biswas, Rana; Bastawros, Ashraf F.; and Chandra, Abhijit, "Simulation of chemical mechanical planarization of copper with molecular dynamics" (2002). Aerospace Engineering Publications. 68.