Campus Units

Aerospace Engineering, Materials Science and Engineering, Mechanical Engineering, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

1-2017

Journal or Book Title

Physical Review Letters

Volume

118

Issue

2

First Page

025701

DOI

10.1103/PhysRevLett.118.025701

Abstract

Starting with thermodynamic predictions and following with molecular dynamics simulations, special triaxial compression-tension states were found for which the stresses for the instability of the crystal lattice of silicon (Si) are the same for direct and reverse phase transformations (PTs) between semiconducting Si I and metallic Si II phases. This leads to unique homogeneous and hysteresis-free first-order PTs, for which each intermediate crystal lattice along the transformation path is in indifferent thermodynamic equilibrium and can be arrested and studied by fixing the strain in one direction. By approaching these stress states, a traditional two-phase system continuously transforms to homogenous intermediate phases. Zero hysteresis and homogeneous transformations are the optimal property for various PT applications, which drastically reduce damage and energy dissipation.

Comments

This article is published as Levitas, Valery I., Hao Chen, and Liming Xiong. "Triaxial-Stress-Induced Homogeneous Hysteresis-Free First-Order Phase Transformations with Stable Intermediate Phases." Physical Review Letters 118, no. 2 (2017): 025701. doi: 10.1103/PhysRevLett.118.025701. Posted with permission.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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