Campus Units
Electrical and Computer Engineering, Materials Science and Engineering, Ames Laboratory
Document Type
Conference Proceeding
Conference
13th Joint Magnetism and Magnetic Materials (MMM)/Intermag Conference
Publication Version
Accepted Manuscript
Link to Published Version
https://dx.doi.org/10.1109/TMAG.2016.2519512
Publication Date
7-2016
Journal or Book Title
IEEE Transactions on Magnetics
Volume
52
Issue
7
First Page
4002304
DOI
10.1109/TMAG.2016.2519512
Conference Date
January 11-15, 2016
City
San Diego, CA
Abstract
Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 Omega/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Omega/T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. The implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.
Rights
Copyright 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Copyright Owner
IEEE
Copyright Date
2016
Language
en
File Format
application/pdf
Recommended Citation
Ni, Y.; Zhang, Zhao; Nlebedim, Cajetan I.; and Jiles, David C., "Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi2Te3 Topological Insulator Thin Films" (2016). Ames Laboratory Conference Papers, Posters, and Presentations. 96.
https://lib.dr.iastate.edu/ameslab_conf/96
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons
Comments
This is a manuscript of an article published as Ni, Y., Z. Zhang, I. C. Nlebedim, and D. C. Jiles. "Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi 2 Te 3 Topological Insulator Thin Films." IEEE Transactions on Magnetics 52, no. 7 (2016): 1-4. DOI: 10.1109/TMAG.2016.2519512. Posted with permission.