Publication Date

6-15-2018

Department

Ames Laboratory; Physics and Astronomy

Campus Units

Physics and Astronomy, Ames Laboratory

Report Number

IS-J 9701

DOI

10.1103/PhysRevB.97.235132

Journal Title

Physical Review B

Volume Number

97

Issue Number

23

First Page

235132

Abstract

Monobismuthides of lutetium and yttrium are shown as representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateaus. At low temperatures and in magnetic fields of 9 T, the magnetoresistance attains orders of magnitude of 104% and 103%, on YBi and LuBi, respectively. Our thorough examination of electron-transport properties of both compounds shows that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. An anisotropic multiband model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov–de Haas oscillation analysis also confirm that the Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.

Language

en

Department of Energy Subject Categories

36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Publisher

Iowa State University Digital Repository, Ames IA (United States)

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