Publication Date
6-19-2018
Department
Ames Laboratory; Physics and Astronomy
Campus Units
Ames Laboratory, Physics and Astronomy
OSTI ID+
1459545
Report Number
IS-J 9701
DOI
10.1103/PhysRevB.97.235132
Journal Title
Physical Review B
Volume Number
97
Issue Number
23
First Page
235132
Abstract
Monobismuthides of lutetium and yttrium are shown as representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateaus. At low temperatures and in magnetic fields of 9 T, the magnetoresistance attains orders of magnitude of 104% and 103%, on YBi and LuBi, respectively. Our thorough examination of electron-transport properties of both compounds shows that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. An anisotropic multiband model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov–de Haas oscillation analysis also confirm that the Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.
DOE Contract Number(s)
AC02-07CH11358; 2015/18/A/ST3/00057
Language
en
Department of Energy Subject Categories
36 MATERIALS SCIENCE
Publisher
Iowa State University Digital Repository, Ames IA (United States)
