Publication Date

5-30-2018

Department

Ames Laboratory; Materials Science & Engineering; Chemistry; Chemical and Biological Engineering

Campus Units

Chemistry, Chemical and Biological Engineering, Materials Science and Engineering, Ames Laboratory

Report Number

IS-J 9706

DOI

10.1021/acsami.8b03771

Journal Title

ACS Applied Materials and Interfaces

Volume Number

10

Issue Number

24

First Page

20740

Last Page

20747

Abstract

This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.

Language

en

Department of Energy Subject Categories

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY

Publisher

Iowa State University Digital Repository, Ames IA (United States)

Available for download on Thursday, May 30, 2019

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