Publication Date
5-30-2018
Department
Ames Laboratory; Materials Science & Engineering; Chemistry; Chemical and Biological Engineering
Campus Units
Chemical and Biological Engineering, Chemistry, Materials Science and Engineering, Ames Laboratory
OSTI ID+
1460404
Report Number
IS-J 9706
DOI
10.1021/acsami.8b03771
Journal Title
ACS Applied Materials and Interfaces
Volume Number
10
Issue Number
24
First Page
20740
Last Page
20747
Abstract
This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.
DOE Contract Number(s)
AC02-07CH11358
Language
en
Department of Energy Subject Categories
36 MATERIALS SCIENCE
Publisher
Iowa State University Digital Repository, Ames IA (United States)
Included in
Materials Chemistry Commons, Nanoscience and Nanotechnology Commons, Semiconductor and Optical Materials Commons
