Publication Date
5-30-2018
Department
Ames Laboratory; Materials Science & Engineering; Chemistry; Chemical and Biological Engineering
Campus Units
Chemistry, Chemical and Biological Engineering, Materials Science and Engineering, Ames Laboratory
Report Number
IS-J 9706
DOI
10.1021/acsami.8b03771
Journal Title
ACS Applied Materials and Interfaces
Volume Number
10
Issue Number
24
First Page
20740
Last Page
20747
Abstract
This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.
Language
en
Department of Energy Subject Categories
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY
Publisher
Iowa State University Digital Repository, Ames IA (United States)
Included in
Materials Chemistry Commons, Nanoscience and Nanotechnology Commons, Semiconductor and Optical Materials Commons
