Publication Date

3-6-2019

Department

Ames Laboratory; Physics and Astronomy

Campus Units

Physics and Astronomy, Ames Laboratory

OSTI ID+

1498569

Report Number

IS-J 9916

DOI

10.1002/adma.201808074

Journal Title

Advanced Materials

Volume Number

31

Issue Number

17

First Page

1808074

Abstract

2D materials are promising candidates for next-generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI3, which is based on honeycomb vanadium layers separated by an iodine-iodine van der Waals gap. It has a BiI3-type structure (R (3) over bar, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI3 becomes ferromagnetic at 49 K, below which magneto-optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

DOE Contract Number(s)

DMR‐1539918; AC02‐07CH11358; AC02‐98CH10886; AC02-98CH10886

Language

en

Department of Energy Subject Categories

36 MATERIALS SCIENCE

Publisher

Iowa State University Digital Repository, Ames IA (United States)

Available for download on Friday, March 06, 2020

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