Publication Date
1-9-2019
Department
Ames Laboratory; Physics and Astronomy
Campus Units
Ames Laboratory, Physics and Astronomy
OSTI ID+
1492303
Report Number
IS-J 9853
DOI
10.1103/PhysRevB.99.045119
Journal Title
Physical Review B
Volume Number
99
Issue Number
4
First Page
045119
Abstract
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, and two dimensional electron gas, show positive, nonsaturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle-dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive, and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature independent, suggestive of quantum mechanical origin.
DOE Contract Number(s)
MOE2014-T2-2-112; NRFI2015-04; FG02-06ER46319; AC02-07CH11358
Language
en
Department of Energy Subject Categories
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Publisher
Iowa State University Digital Repository, Ames IA (United States)
