Title

Synthesis of Interface-Driven Tunable Bandgap Metal Oxides

Publication Date

8-17-2020

Department

Chemistry; Ames Laboratory; Microelectronics Research Center (MRC); Electrical and Computer Engineering; Materials Science and Engineering

Campus Units

Ames Laboratory, Chemistry, Materials Science and Engineering, Electrical and Computer Engineering, Microelectronics Research Center (MRC)

OSTI ID+

1658567

Report Number

IS-J 10292

DOI

10.1021/acsmaterialslett.0c00251

Journal Title

ACS Materials Letters

Volume Number

2

Issue Number

9

First Page

1211

Last Page

1217

Abstract

Mixed bandgap and bandgap tunability in semiconductors is critical in expanding their use. Composition alterations through single-crystal epitaxial growth and the formation of multilayer tandem structures are often employed to achieve mixed bandgaps, albeit with limited tunability. Herein, self-assembled one-dimensional coordination polymers provide facile synthons and templates for graphitic C-doped mesoporous oxides, gC-β-Ga2O3 or gC-In2O3 via controlled oxidative ligand ablation. These materials have mixed bandgaps and colors, depending on amount of gC present. The carbon/oxide interface leads to induced gap states, hence, a stoichiometrically tunable band structure. Structurally, a multiscale porous network percolating throughout the material is realized. The nature of the heat treatment and the top-down process allows for facile tunability and the formation of mixed bandgap metal oxides through controlled carbon deposition. As a proof of concept, gC-β-Ga2O3 was utilized as a photocatalyst for CO2 reduction, which demonstrated excellent conversion rates into CH4 and CO.

DOE Contract Number(s)

AC02-07CH11358

Language

en

Publisher

Iowa State University Digital Repository, Ames IA (United States)

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