Title
Synthesis of Interface-Driven Tunable Bandgap Metal Oxides
Publication Date
8-17-2020
Department
Chemistry; Ames Laboratory; Microelectronics Research Center (MRC); Electrical and Computer Engineering; Materials Science and Engineering
Campus Units
Ames Laboratory, Chemistry, Materials Science and Engineering, Electrical and Computer Engineering, Microelectronics Research Center (MRC)
OSTI ID+
1658567
Report Number
IS-J 10292
DOI
10.1021/acsmaterialslett.0c00251
Journal Title
ACS Materials Letters
Volume Number
2
Issue Number
9
First Page
1211
Last Page
1217
Abstract
Mixed bandgap and bandgap tunability in semiconductors is critical in expanding their use. Composition alterations through single-crystal epitaxial growth and the formation of multilayer tandem structures are often employed to achieve mixed bandgaps, albeit with limited tunability. Herein, self-assembled one-dimensional coordination polymers provide facile synthons and templates for graphitic C-doped mesoporous oxides, gC-β-Ga2O3 or gC-In2O3 via controlled oxidative ligand ablation. These materials have mixed bandgaps and colors, depending on amount of gC present. The carbon/oxide interface leads to induced gap states, hence, a stoichiometrically tunable band structure. Structurally, a multiscale porous network percolating throughout the material is realized. The nature of the heat treatment and the top-down process allows for facile tunability and the formation of mixed bandgap metal oxides through controlled carbon deposition. As a proof of concept, gC-β-Ga2O3 was utilized as a photocatalyst for CO2 reduction, which demonstrated excellent conversion rates into CH4 and CO.
DOE Contract Number(s)
AC02-07CH11358
Language
en
Publisher
Iowa State University Digital Repository, Ames IA (United States)
