Campus Units

Chemistry, Mathematics, Physics and Astronomy, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

7-2005

Journal or Book Title

Physical Review B

Volume

72

Issue

3

First Page

1

Last Page

8

DOI

10.1103/PhysRevB.72.035426

Abstract

Deposition at room temperature of Ga on Si(100) produces single-atom-wide metal rows orthogonal to the Si-dimer rows. Detailed analysis using scanning tunneling microscopy reveals a monotonically decreasing size (i.e., length) distribution for these rows. This is unexpected for homogeneous nucleation without desorption, conditions which are operative in this system. Kinetic Monte Carlo simulation of an appropriate atomistic model indicates that this behavior is primarily a consequence of the feature that the capture of diffusing atoms is greatly inhibited in the Ga∕Si(100) system. The modeling also determines activation barriers for anisotropic terrace diffusion, and recovers the experimental distribution of metal rows. In addition, we analyze a variety of other generic deposition models and determine that the propensity for a large population of small islands in general reflects an enhanced nucleation rate relative to the aggregation rate.

Comments

This article is from Physical Review B 72 (2005): 035426, doi:10.1103/PhysRevB.72.035426. Posted with permission.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

Included in

Chemistry Commons

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