Campus Units

Electrical and Computer Engineering, Materials Science and Engineering, Ames Laboratory

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

1-1-2017

Journal or Book Title

Thin Solid Films

Volume

621

First Page

247

Last Page

252

DOI

10.1016/j.tsf.2016.09.013

Abstract

The influence of thermal cycling on the microstructure, magnetic phase transition and magnetic entropy change of a Gd5Si1.3Ge2.7 thin film up to 1000 cycles is investigated. The authors found that after 1000 cycles a strong reduction of the crystallographic phase responsible for the magnetostructural transition (Orthorhombic II phase) occurs. This is attributed to chemical disorder, caused by the large number of expansion/compression cycles that the Orthorhombic II phase undergoes across the magnetostructural transition. The suppression of the magnetostructural transition corresponds to a drastic decrease of the thin film magnetic entropy change. These results reveal the importance of studying the thermal/magnetic cycles influence on magnetostructural transitions as they can damage a real-life device.

Comments

This is a manuscript of an article published as Pires, A. L., J. H. Belo, I. T. Gomes, R. L. Hadimani, D. L. Schlagel, T. A. Lograsso, D. C. Jiles, A. M. L. Lopes, J. P. Araújo, and A. M. Pereira. "Suppression of magnetostructural transition on GdSiGe thin film after thermal cyclings." Thin Solid Films 621 (2017): 247-252. DOI: 10.1016/j.tsf.2016.09.013. Posted with permission.

Creative Commons License

Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License.

Copyright Owner

Elsevier B.V.

Language

en

File Format

application/pdf

Published Version

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