Influence of Mn Concentration on Magnetic Topological Insulator MnxBi2−xTe3 Thin-Film Hall-Effect Sensor
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Ames National Laboratory is a government-owned, contractor-operated national laboratory of the U.S. Department of Energy (DOE), operated by and located on the campus of Iowa State University in Ames, Iowa.
For more than 70 years, the Ames National Laboratory has successfully partnered with Iowa State University, and is unique among the 17 DOE laboratories in that it is physically located on the campus of a major research university. Many of the scientists and administrators at the Laboratory also hold faculty positions at the University and the Laboratory has access to both undergraduate and graduate student talent.
The Department of Electrical and Computer Engineering (ECpE) contains two focuses. The focus on Electrical Engineering teaches students in the fields of control systems, electromagnetics and non-destructive evaluation, microelectronics, electric power & energy systems, and the like. The Computer Engineering focus teaches in the fields of software systems, embedded systems, networking, information security, computer architecture, etc.
History
The Department of Electrical Engineering was formed in 1909 from the division of the Department of Physics and Electrical Engineering. In 1985 its name changed to Department of Electrical Engineering and Computer Engineering. In 1995 it became the Department of Electrical and Computer Engineering.
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1909-present
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- Department of Electrical Engineering (1909-1985)
- Department of Electrical Engineering and Computer Engineering (1985-1995)
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- College of Engineering (parent college)
- Department of Physics and Electrical Engineering (predecessor)
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Abstract
Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.
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This is a manuscript of an article published as Ni, Y., Z. Zhang, I. C. Nlebedim, R. L. Hadimani, and D. C. Jiles. "Influence of Mn Concentration on Magnetic Topological Insulator Mn x Bi 2− x Te 3 Thin-Film Hall-Effect Sensor." IEEE Transactions on Magnetics 51, no. 11 (2015): 1-4. DOI: 10.1109/TMAG.2015.2444378. Posted with permission.