Campus Units

Electrical and Computer Engineering, Materials Science and Engineering, Ames Laboratory

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

11-2015

Journal or Book Title

IEEE Transactions on Magnetics

Volume

51

Issue

11

First Page

4004704

DOI

10.1109/TMAG.2015.2444378

Abstract

Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.

Comments

This is a manuscript of an article published as Ni, Y., Z. Zhang, I. C. Nlebedim, R. L. Hadimani, and D. C. Jiles. "Influence of Mn Concentration on Magnetic Topological Insulator Mn x Bi 2− x Te 3 Thin-Film Hall-Effect Sensor." IEEE Transactions on Magnetics 51, no. 11 (2015): 1-4. DOI: 10.1109/TMAG.2015.2444378. Posted with permission.

Rights

Copyright 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright Owner

IEEE

Language

en

File Format

application/pdf

Published Version

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