Journal or Book Title
Physical Review B
A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb5Si2.2Ge1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance (MR) is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a unique geometric arrangement of the interphase boundaries and large magnetocrystalline anisotropy of the compound.
American Physical Society
Zou, Min; Pecharsky, Vitalij K.; Gschneidner, Karl A. Jr.; Mudryk, Yaroslav; Schlagel, Deborah L.; and Lograsso, Thomas A., "Electrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8" (2009). Ames Laboratory Publications. 66.