This thesis examines a particular set of properties of Silicon-On-Insulator (SOI) devices and their application to a bandgap voltage reference. SOI is a specialized process intended to boost various performance parameters of a traditional bulk process by embedding an insulating layer below the surface of the silicon. Some of the advantages of SOI over traditional bulk processes are as follows: higher frequency response, higher tolerance to harsh radiation, and greater density of logic circuits. However, two parasitic effects, the lateral bipolar action and the self-heating effect, inherent in SOI MOSFET devices have impeded the use of SOI. A goal of this investigation is to model these behaviors using existing electrical elements in HSPICE. Ultimately, this thesis attempts to utilize these two effects to create a thermally regulated bandgap voltage reference that can be utilized on a SOI CMOS process.