In-Situ Characterization of Carrier Mobility in Field Effect Transistors
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Begun in 1973, the Review of Progress in Quantitative Nondestructive Evaluation (QNDE) is the premier international NDE meeting designed to provide an interface between research and early engineering through the presentation of current ideas and results focused on facilitating a rapid transfer to engineering development.
This site provides free, public access to papers presented at the annual QNDE conference between 1983 and 1999, and abstracts for papers presented at the conference since 2001.
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Abstract
The Field Effect Transistor (FET) is today the basic element of Very Large Scale Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the Modulation Doped Field Effect Transistors (MODFETs).