Document Type

Article

Publication Date

2010

Journal or Book Title

Physical Review B

Volume

82

Issue

24

First Page

245413

DOI

10.1103/PhysRevB.82.245413

Abstract

It is well known that conversion of Si(111)-(7×7) into the (√3×√3)R30° phase of adsorbed Ag requires a change in the Si density, and causes formation of islands and holes at the surface. By mass balance, the ratio of areas of islands and holes (RIH) should be approximately 1. However, we find that the ratio is significantly higher, depending on preparation conditions. A possible explanation would be that there are different types of (√3×√3)R30° structures. However, neither scanning tunneling microscopy nor density-functional theory (implemented as a genetic algorithm search) supports this explanation. We propose that the edges of the islands contain excess Ag which becomes available to expand the holes, when the island perimeter decreases. Under certain conditions, excess Ag is also made available by dissolution of small islands that are Ag rich.

Comments

This article is from Physical Review B 82, no. 24 (2010): 245413, doi:10.1103/PhysRevB.82.245413.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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