Campus Units

Chemistry

Document Type

Article

Publication Version

Published Version

Publication Date

1-2008

Journal or Book Title

Journal of Physical Chemistry C

Volume

112

Issue

3

First Page

754

Last Page

761

DOI

10.1021/jp073164b

Abstract

The interaction of the polyhedral oligomeric silsesquioxane (POSS) T8, (HSiO3/2)8 with the Si(100) surface has been studied using a cluster model, represented by the single dimer Si9H12 to represent the surface. Hartree−Fock (HF), density functional theory (DFT), and multi-configuration self-consistent field (MCSCF) wavefunctions have been used to optimize the geometries of stationary points on the potential energy surface. The HF and MCSCF wavefunctions are augmented by second-order perturbation theory for improved relative energies. The POSS reacts with the Si(100) surface saturating dangling bonds on the surface, yielding two possible addition products. One of these forms a Si−Si bond between the POSS and the dimer at the same time that a hydrogen atom is transferred from the POSS to the adjacent silicon atom of the same dimer, with no structural modification of the cage. The other product involves the opening of the POSS cage with the corresponding formation of a pair of Si−Si and Si−O bonds with the surface. The former mechanism produces a lower-energy product, whereas the second reaction channel has a lower-energy barrier, which actually vanishes when dynamic correlation energy is included in the calculation.

Comments

Reprinted (adapted) with permission from Journal of Journal of Physical Chemistry C 112 (2008): 754, doi:10.1021/jp073164b. Copyright 2008 American Chemical Society.

Copyright Owner

American Chemical Society

Language

en

File Format

application/pdf

Included in

Chemistry Commons

Share

COinS