Campus Units

Chemistry, Mathematics, Ames Laboratory

Document Type

Article

Publication Date

7-24-2000

Journal or Book Title

Physical Review Letters

Volume

85

Issue

4

First Page

800

Last Page

803

DOI

10.1103/PhysRevLett.85.800

Abstract

Ag(100) homoepitaxy constitutes one of the simplest systems in which to study thin-film growth. Yet we find that the roughness variation with temperature is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 25 monolayer films first increases, then decreases, then increases again. A transition from mound formation to self-affine (semifractal) growth occurs at ∼135 K. The underlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.

Comments

This article is from Physical Review Letters 85, no. 4 (2000): 800–803, doi:10.1103/PhysRevLett.85.800.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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