Campus Units
Chemistry, Mathematics, Ames Laboratory
Document Type
Article
Publication Date
7-24-2000
Journal or Book Title
Physical Review Letters
Volume
85
Issue
4
First Page
800
Last Page
803
DOI
10.1103/PhysRevLett.85.800
Abstract
Ag(100) homoepitaxy constitutes one of the simplest systems in which to study thin-film growth. Yet we find that the roughness variation with temperature is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 25 monolayer films first increases, then decreases, then increases again. A transition from mound formation to self-affine (semifractal) growth occurs at ∼135 K. The underlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.
Copyright Owner
American Physical Society
Copyright Date
2000
Language
en
File Format
application/pdf
Recommended Citation
Stoldt, C. R.; Caspersen, K. J.; Bartelt, M. C.; Jenks, Cynthia J.; Evans, James W.; and Thiel, Patricia A., "Using Temperature to Tune Film Roughness: Nonintuitive Behavior in a Simple System" (2000). Chemistry Publications. 52.
https://lib.dr.iastate.edu/chem_pubs/52
Comments
This article is from Physical Review Letters 85, no. 4 (2000): 800–803, doi:10.1103/PhysRevLett.85.800.