Initial stages of metal encapsulation during epitaxial growth studied by STM: Rh/Ag(100)

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1996-05-15
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Chang, S.-L.
Wen, J.-M.
Thiel, Patricia
Günther, S.
Meyer, J.
Behm, R.
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Chemistry

The Department of Chemistry seeks to provide students with a foundation in the fundamentals and application of chemical theories and processes of the lab. Thus prepared they me pursue careers as teachers, industry supervisors, or research chemists in a variety of domains (governmental, academic, etc).

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Abstract

We present results of a scanning tunneling microscope (STM) study of Rh/Ag(100) epitaxy, which shows how the surface rearranges toward the more stable encapsulated structure known to form at higher temperatures. At room temperature, Rh growth proceeds via two competing pathways: (i) thermally activated exchange with Ag surface atoms, which leads to increased coordination of the higher surface free-energy metal Rh by Ag atoms, and (ii) nucleation and growth of mixed Rh/Ag adislands. The Ag-Rh interaction also reduces the surface mobility of Ag, e.g., by local pinning of step edges, accompanied by complex step and surface erosion processes.

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This article is from Physical Review B 53, no. 20 (1996): 13747–13752, doi:10.1103/PhysRevB.53.13747.

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Mon Jan 01 00:00:00 UTC 1996
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