Campus Units

Electrical and Computer Engineering

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

4-2015

Journal or Book Title

IEEE Transactions on Microwave Theory and Techniques

Volume

63

Issue

4

First Page

1315

Last Page

1323

DOI

10.1109/TMTT.2015.2403843

Abstract

A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm.

Comments

This is a manuscript of an article published as Sessou, Kossi K., and Nathan M. Neihart. "An Integrated 700–1200 MHz Class-F PA with Tunable Harmonic Terminations in 0.13μm CMOS." IEEE Transactions on Microwave Theory and Techniques 63, no. 4 (2015): 1315-1323. DOI: 10.1109/TMTT.2015.2403843. Posted with permission.

Rights

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright Owner

IEEE

Language

en

File Format

application/pdf

Published Version

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