Title
Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6
Document Type
Article
Publication Version
Published Version
Publication Date
2015
Journal or Book Title
Journal of Applied Physics
Volume
117
Issue
17
First Page
17D106
DOI
10.1063/1.4907190
Abstract
Gd5(Six Ge 1−x)4 has mixed phases in the composition range 0.32 < x < 0.41, which have not been widely studied. In this paper, we have synthesized and indexed single crystal samples of Gd5Si1.3 Ge 2.7 and Gd5Si1.4 Ge 2.6. We have investigated the first order and second orderphase transition temperatures of these samples using magnetic moment vs. temperature andmagnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.
Rights
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Copyright Owner
American Institute of Physics
Copyright Date
2015
Language
en
File Format
application/pdf
Recommended Citation
Hadimani, Ravi L.; Melikhov, Yevgen; Schlagel, Deborah L.; Lograsso, Thomas A.; Dennis, Kevin W.; McCallum, R. William; and Jiles, David C., "Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6" (2015). Electrical and Computer Engineering Publications. 49.
https://lib.dr.iastate.edu/ece_pubs/49
Comments
The following article appeared in J. Appl. Phys. 117, 17D106 (2015) and may be found at http://dx.doi.org/10.1063/1.4907190.