Document Type
Article
Publication Version
Published Version
Publication Date
2015
Journal or Book Title
Journal of Applied Physics
Volume
117
Issue
17
First Page
17C748
DOI
10.1063/1.4918560
Abstract
We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.
Rights
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Copyright Owner
American Institute of Physics
Copyright Date
2015
Language
en
File Format
application/pdf
Recommended Citation
Ni, Yan; Zhang, Z.; Nlebedim, Ikenna C.; Hadimani, M. Ravi; Tuttle, Gary L.; and Jiles, David C., "Ferromagnetism of magnetically doped topological insulators in CrxBi2− xTe3 thin films" (2015). Electrical and Computer Engineering Publications. 53.
https://lib.dr.iastate.edu/ece_pubs/53
Comments
The following article appeared in Journal of Applied Physics 117 (2015): 17C748 and may be found at http://dx.doi.org/10.1063/1.4918560.