Document Type

Article

Publication Version

Published Version

Publication Date

2015

Journal or Book Title

Journal of Applied Physics

Volume

117

Issue

17

First Page

17B319-1

Last Page

17B319-4

DOI

10.1063/1.4918756

Abstract

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ± 1200 A can be generated with inputs of +/-20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG1) and MOSFET circuits (HCMFG2) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Comments

The following article appeared in Journal of Applied Physics 117 (2015): and may be found at doi: 10.1063/1.4918756.

Rights

Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Copyright Owner

American Institute of Physics

Language

en

File Format

application/pdf

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