Campus Units

Electrical and Computer Engineering, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

2016

Journal or Book Title

AIP Advances

Volume

6

Issue

5

First Page

055812

DOI

10.1063/1.4943156

Abstract

We deposited high quality (Sb1−xBix)2Te3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb0.957Bi0.043)2Te3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is then determined as 0.81 × 1016 m−2, which is lower than that of most TIs reported previously, indicating that (Sb0.957Bi0.043)2Te3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb0.957Bi0.043)2Te3 and will be helpful for designing TI-based devices.

Comments

The following article appeared in AIP Advances 6, 055812 (2016) and may be found at http://dx.doi.org/10.1063/1.4943156.

Rights

Copyright 2016 Authors. This article is distributed under a Creative Commons Attribution (CC BY) License.

Copyright Owner

The authors

Language

en

File Format

application/pdf

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