Degree Type

Thesis

Date of Award

2010

Degree Name

Master of Science

Department

Electrical and Computer Engineering

First Advisor

Nathan Neihart

Second Advisor

Sumit Chaudhary

Abstract

A new method for the fabrication of memristors is exhibited involving the

electrochemical anodization of titanium. This is an inexpensive, room temperature alternative to the current methods of fabrication. Two sets of devices were fabricated with varying anodization times and the devices were characterized. One set of the devices was annealed before characterization to evaluate the importance of annealing as stated in papers. The devices not annealed yielded memristive behavior due to oxygen vacancies created at the titanium-TiO2 junction buried below the surface of the device. The annealed devices behaved as resistors because the surface of the TiO2 exposed to the annealing created oxygen vacancies at this interface ensuring both junctions were ohmic. Using an existing model, the best device was modeled by adapting the relevant process parameters.

Copyright Owner

Kyle James Miller

Language

en

Date Available

2012-04-30

File Format

application/pdf

File Size

55 pages

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