Campus Units
Electrical and Computer Engineering, Industrial Design
Document Type
Article
Publication Version
Published Version
Publication Date
2-9-2021
Journal or Book Title
AIP Advances
Volume
11
Issue
2
First Page
025118
DOI
10.1063/9.0000210
Abstract
Magnetic field pulsers (MFP) generate a pulsed magnetic field by driving current through an inductor. These pulsers have numerous applications based on the output magnetic flux density and switching time. This investigation will explore the application of gallium nitride-based (GaN) transistor in a MFP design. Based on the advantages of GaN transistors, the investigation looks towards creating a pulser capable of producing magnetic flux density of 500 Gauss with a rise/fall time of less than 500 nanoseconds. This investigation will improve upon findings from prior pulsers designed for magneto-optic switching applications. Simulation results have shown that for a given maximum current level, the GaN transistor pulser displays steeper rise and fall time when compared to a pulser employing a Si transistor. This result further highlights the potential of GaN transistor as the switching device where rapid field switching is preferable.
Creative Commons License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 4.0 License.
Copyright Owner
The Author(s)
Copyright Date
2021
Language
en
File Format
application/pdf
Recommended Citation
Theh, Wei S.; Gaunkar, N. Prabhu; and Mina, Mani, "GaN-based fast, high output magnetic field pulser" (2021). Industrial Design Publications. 19.
https://lib.dr.iastate.edu/industrialdesign_pubs/19
Included in
Graphic Design Commons, Industrial and Product Design Commons, Industrial Technology Commons, Systems Engineering Commons
Comments
This article is published as Theha, W.S., Gaunkar, N.P., Mina, M., GaN-based fast, high output magnetic field pulser. AIP Advances. Feb 2021, 11(2); 025118. DOI: 10.1063/9.0000210.