Campus Units
Chemistry, Mathematics, Ames Laboratory
Document Type
Article
Publication Version
Published Version
Publication Date
11-15-1997
Journal or Book Title
Physical Review B
Volume
56
Issue
19
First Page
12539
Last Page
12543
DOI
10.1103/PhysRevB.56.12539
Abstract
We propose a kinetic model to describe the temperature dependence of the shape of islands formed during submonolayer epitaxy on anisotropic metal surfaces. Our model reveals that "anisotropic corner rounding" is the key atomic process responsible for a transition in island shape, from chain structures at lower temperatures, to compact islands at higher temperatures. Exploiting data for the temperature and flux scaling of the island density, we analyze such behavior observed experimentally in Cu/Pd(110) epitaxy, estimating activation barriers of 0.45 and 0.3 eV for anisotropic terrace diffusion, and 0.65 eV for the slow corner-rounding process.
Copyright Owner
American Physical Society
Copyright Date
1997
Language
en
File Format
application/pdf
Recommended Citation
Li, Yinggang; Bartelt, M. C.; Evans, James W.; Waelchli, N.; Kampshoff, E.; and Kern, K., "Transition from one- to two-dimensional island growth on metal (110) surfaces induced by anisotropic corner rounding" (1997). Mathematics Publications. 36.
https://lib.dr.iastate.edu/math_pubs/36
Comments
This article is from Physical Review B 56 (1997): 12539, doi: 10.1103/PhysRevB.56.12539.