Document Type

Article

Publication Date

1989

Journal or Book Title

Journal of Applied Physics

Volume

65

Issue

3

First Page

1293

Last Page

1301

DOI

10.1063/1.343024

Abstract

A combined resistivitytransmission electron microscopy(TEM) study has been done on heavily drawn Cu‐20 vol % Nb alloys (so‐called i n s i t u alloys). The results show that electron scattering at Cu‐Nb interfaces makes the major contribution to resistivity in heavily drawn wire. The dislocation contribution is small and constant at deformation strains greater than around 4, apparently as a result of dynamic recovery/recrystallization of the Cu matrix which occurs during room‐temperature drawing. Results of this study and other recent TEM dislocation studies indicate that the dislocation density in heavily drawn Cu‐20 vol % Nb material does not exceed 101 1 cm 2. It is demonstrated here that the 101 3‐ cm 2 dislocation density predicted by the resistivity study of Karasek and Bevk [J. Appl. Phys. 5 2, 1370 (1981)] is high because the interface scattering contribution is more strongly reduced by coarsening than they assumed. It is shown that resistivitymeasurements provide a means of evaluating an average Cu channel diameter in the aligned composite alloys formed at large deformation strains.

Comments

The following article appeared in Journal of Applied Physics 65, 1293 (1989); doi: 10.1063/1.343024 and may be found at doi: 10.1063/1.343024

Rights

Copyright 1989 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Copyright Owner

American Institute of Physics

Language

en

File Format

application/pdf

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