Campus Units

Materials Science and Engineering

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

2016

Journal or Book Title

IEEE Electronic Device Letters

Volume

37

Issue

12

First Page

1551

Last Page

1554

DOI

10.1109/LED.2016.2614841

Abstract

Ferroelectric random access memory (FRAM) is a two-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here, we propose a novel non-volatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-FRAM (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it is an operation protocol. Our initial experimental demonstration of the memory effect in anti-ferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a four-state nonvolatile memory capable of storing two digital bits simultaneously, unlike the FRAM technology that has two-memory states and it is capable to store one digital bit per cell.

Comments

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. DOI: 10.1109/LED.2016.2614841.

Copyright Owner

IEEE

Language

en

File Format

application/pdf

Published Version

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