Atomically resolved domain boundary structure in lead zirconate-based antiferroelectrics

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2019-09-18
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Ma, Tao
Fan, Zhongming
Tan, Xiaoli
Zhou, Lin
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Tan, Xiaoli
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Materials Science and Engineering
Materials engineers create new materials and improve existing materials. Everything is limited by the materials that are used to produce it. Materials engineers understand the relationship between the properties of a material and its internal structure — from the macro level down to the atomic level. The better the materials, the better the end result — it’s as simple as that.
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Ames National LaboratoryMaterials Science and Engineering
Abstract

Domain boundary (DB) structures are of great importance for understanding the structure-property relationship in many ferroic crystals. Here, we present atomically resolved DB configurations in PbZrO3-based antiferroelectric ceramics. The Pb-cation displacement relative to B-site cations is precisely determined using aberration-corrected scanning transmission electron microscopy. We find that 90° DBs in undoped PbZrO3 can be as thin as one primitive cell of the perovskite structure, often appearing curved or zigzagged due to the complex dipole arrangement. In a chemically modified composition, Pb0.99Nb0.02[(Zr0.57Sn0.43)0.95Ti0.05]0.98O3, in which incommensurate modulations are present, the DB has a typical thickness of at least two primitive cells, with more or less aligned dipole moments. Our findings provide insights into establishing the structure-property relationship in antiferroelectrics, shedding light on the design and fabrication of domain-boundary electronics.

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This article is published as Ma, Tao, Zhongming Fan, Xiaoli Tan, and Lin Zhou. "Atomically resolved domain boundary structure in lead zirconate-based antiferroelectrics." Applied Physics Letters 115, no. 12 (2019): 122902. DOI: 10.1063/1.5115039. Posted with permission.

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Tue Jan 01 00:00:00 UTC 2019
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