Campus Units

Materials Science and Engineering

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

9-2020

Journal or Book Title

IEEE Transactions on Device and Materials Reliability

Volume

20

Issue

3

First Page

609

Last Page

612

DOI

10.1109/TDMR.2020.3015398

Abstract

The structural and electrical property changes of two types of copper oxides (CuO and Cu 2 O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu 4 O 3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu 2 O film is more extensive and occurs in an area depending on the level of current compliance. The physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

Comments

This is a manuscript of an article published as Tian, Xinchun, Sanaz Yazdanparast, Geoff Brennecka, and Xiaoli Tan. "In situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides." IEEE Transactions on Device and Materials Reliability 20, no. 3 (2020): 609-612. DOI: 10.1109/TDMR.2020.3015398. Posted with permission.

Rights

© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright Owner

IEEE

Language

en

File Format

application/pdf

Published Version

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