Document Type

Article

Publication Date

8-16-2004

Journal or Book Title

Applied Physics Letters

Volume

85

Issue

7

First Page

1181

Last Page

1183

DOI

10.1063/1.1781738

Abstract

The electrical transport properties of semiconducting AlMgB14films deposited at room temperature and 573K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.

Comments

The following article appeared in Applied Physics Letters 85 (2004): 1181, doi:10.1063/1.1781738.

Rights

Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Copyright Owner

American Institute of Physics

Language

en

File Format

application/pdf

Share

COinS