Campus Units

Materials Science and Engineering, Ames Laboratory

Document Type

Article

Publication Version

Accepted Manuscript

Publication Date

5-28-2021

Journal or Book Title

Science

Volume

372

Issue

6545

First Page

961

Last Page

964

DOI

10.1126/science.abe3810

Abstract

Defects are essential to engineering the properties of functional materials ranging from semiconductors and superconductors to ferroics. Whereas point defects have been widely exploited, dislocations are commonly viewed as problematic for functional materials and not as a microstructural tool. We developed a method for mechanically imprinting dislocation networks that favorably skew the domain structure in bulk ferroelectrics and thereby tame the large switching polarization and make it available for functional harvesting. The resulting microstructure yields a strong mechanical restoring force to revert electric field–induced domain wall displacement on the macroscopic level and high pinning force on the local level. This induces a giant increase of the dielectric and electromechanical response at intermediate electric fields in barium titanate [electric field–dependent permittivity (ε33) ≈ 5800 and large-signal piezoelectric coefficient (d33*) ≈ 1890 picometers/volt]. Dislocation-based anisotropy delivers a different suite of tools with which to tailor functional materials.

Comments

This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on May 28, 2021 (vol. 372). DOI: 10.1126/science.abe3810.

Copyright Owner

The Authors

Language

en

File Format

application/pdf

Published Version

Included in

Metallurgy Commons

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