Document Type

Article

Publication Date

10-14-2008

Journal or Book Title

Chemistry of Materials

Volume

20

Issue

19

First Page

6048

Last Page

6052

DOI

10.1021/cm8007304

Abstract

A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li2Ga2GaS6 is 200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

Comments

Reprinted with permission from Chemistry of Materials 20 (2008): 6048–6052, doi:10.1021/cm8007304. Copyright 2008 American Chemical Society.

Copyright Owner

American Chemical Society

Language

en

File Format

application/pdf

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