Document Type
Article
Publication Date
10-14-2008
Journal or Book Title
Chemistry of Materials
Volume
20
Issue
19
First Page
6048
Last Page
6052
DOI
10.1021/cm8007304
Abstract
A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li2Ga2GaS6 is 200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.
Copyright Owner
American Chemical Society
Copyright Date
2008
Language
en
File Format
application/pdf
Recommended Citation
Kim, Youngsik; Seo, Inseok; Martin, Steve W.; Baek, Jaewook; Halasyamani, P. Shiv; Arumugam, Nachiappan; and Steinfink, Hugo, "Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6" (2008). Materials Science and Engineering Publications. 54.
https://lib.dr.iastate.edu/mse_pubs/54
Included in
Atomic, Molecular and Optical Physics Commons, Inorganic Chemistry Commons, Materials Chemistry Commons, Materials Science and Engineering Commons
Comments
Reprinted with permission from Chemistry of Materials 20 (2008): 6048–6052, doi:10.1021/cm8007304. Copyright 2008 American Chemical Society.