Campus Units
Mathematics, Physics and Astronomy, Ames Laboratory
Document Type
Article
Publication Version
Published Version
Publication Date
3-2009
Journal or Book Title
Physical Review B
Volume
79
Issue
11
First Page
113404-1
Last Page
113404-4
DOI
10.1103/PhysRevB.79.113404
Abstract
Scanning tunneling microscopy experiments reveal that small Pb islands with unstable heights, e.g., four layers, on a Si(111) surface decay during coarsening, whereas large islands do not decay but grow to a stable height. This bifurcation in evolution is analyzed by incorporating quantum size effects into theoretical models for island growth dynamics with appropriate geometries. The effective energy barrier for Pb atoms to reach the top of four-layer islands is estimated at about 0.26 eV.
Copyright Owner
American Physical Society
Copyright Date
2009
Language
en
File Format
application/pdf
Recommended Citation
Li, M.; Wang, Cai-Zhuang; Evans, James W.; Hupalo, Myron; Tringides, Michael C.; and Ho, Kai-Ming, "Competition between area and height evolution of Pb islands on a Si(111) surface" (2009). Physics and Astronomy Publications. 197.
https://lib.dr.iastate.edu/physastro_pubs/197
Comments
This article is from Physical Review B 79 (2009): 113404, doi:10.1103/PhysRevB.79.113404 Posted with permission.