Campus Units

Physics and Astronomy, Mathematics, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

1989

Journal or Book Title

Physical Review A

Volume

40

Issue

5

First Page

2868

Last Page

2870

DOI

10.1103/PhysRevA.40.2868

Abstract

We consider an island growth mechanism wherein species adsorbed on top of two-dimensional islands diffuse to the edge and are then incorporated. A simple matrix formulation is developed for this random-walk problem which allows exact calculation of the growth probability distribution, neglecting island rearrangement. Furthermore, we also show how related trapping probabilities can be calculated recursively for various stages of island growth. The case of imperfect trapping at island edges is also considered, and reduction to Eden-modeltype growth in the low-trapping-probability regime is demonstrated. In general, the growing islands are rounder and have fewer defects and narrower active zones than Eden clusters.

Comments

This article is published as Evans, J. W. "Analysis of a diffusion-limited island growth mechanism for chemisorption and epitaxy." Physical Review A 40, no. 5 (1989): 2868, doi:10.1103/PhysRevA.40.2868. Posted with permission.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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