Campus Units

Physics and Astronomy, Mathematics, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

1989

Journal or Book Title

Physical Review B

Volume

39

Issue

9

First Page

5655

Last Page

5664

DOI

10.1103/PhysRevB.39.5655

Abstract

The simple on-top site random-deposition model for film growth on a simple-cubic (100) substrate is extended to other adsorption-site geometries and crystal structures. Nontrivial statistical correlations within the growing film typically result. However, the master equations can be solved exactly to elucidate, e.g., growth kinetics, Bragg intensity (IBr) behavior for surface diffraction, and spatial correlations within the film. Other techniques facilitate analysis of the percolative structure of intralayer islands. For random deposition at fourfold hollow sites on a face-centered cubic (100) substrate, despite the absence of diffusion, there are distinct IBr oscillations similar to those observed experimentally during deposition of Pt on Pd(100) at low temperature.

Comments

This article is published as Evans, J. W. "Random-deposition models for thin-film epitaxial growth." Physical Review B 39, no. 9 (1989): 5655. doi:10.1103/PhysRevB.39.5655. Posted with permission.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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