Campus Units
Physics and Astronomy, Ames Laboratory
Document Type
Article
Publication Version
Published Version
Publication Date
3-20-2015
Journal or Book Title
Physical Review Letters
Volume
114
Issue
11
First Page
117201
DOI
10.1103/PhysRevLett.114.117201
Abstract
Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g∼16).
Copyright Owner
American Physical Society
Copyright Date
2015
Language
en
File Format
application/pdf
Recommended Citation
Narayanan, A.; Watson, M. D.; Blake, S. F.; Bruyant, N.; Drigo, L.; Chen, Y. L.; Prabhakaran, D.; Yan, B.; Felser, C.; Kong, T.; Canfield, Paul C.; and Coldea, A. I., "Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2" (2015). Physics and Astronomy Publications. 594.
https://lib.dr.iastate.edu/physastro_pubs/594
Comments
This article is published as Narayanan, A., M. D. Watson, S. F. Blake, N. Bruyant, L. Drigo, Y. L. Chen, D. Prabhakaran, B. Yan, C. Felser, T. Kong, P. C. Canfield, and A. I. Coldea. "Linear magnetoresistance caused by mobility fluctuations in n-doped Cd 3 As 2." Physical Review Letters 114, no. 11 (2015): 117201. DOI: 10.1103/PhysRevLett.114.117201. Posted with permission.