Campus Units

Physics and Astronomy, Ames Laboratory

Document Type

Article

Publication Version

Published Version

Publication Date

3-20-2015

Journal or Book Title

Physical Review Letters

Volume

114

Issue

11

First Page

117201

DOI

10.1103/PhysRevLett.114.117201

Abstract

Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g∼16).

Comments

This article is published as Narayanan, A., M. D. Watson, S. F. Blake, N. Bruyant, L. Drigo, Y. L. Chen, D. Prabhakaran, B. Yan, C. Felser, T. Kong, P. C. Canfield, and A. I. Coldea. "Linear magnetoresistance caused by mobility fluctuations in n-doped Cd 3 As 2." Physical Review Letters 114, no. 11 (2015): 117201. DOI: 10.1103/PhysRevLett.114.117201. Posted with permission.

Copyright Owner

American Physical Society

Language

en

File Format

application/pdf

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