Schedule

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1987
Thursday, January 1st
12:00 AM

Atomic Force Microscopy: General Principles and a New Implementation

Section: Electronic Materials and Devices

Gary M. McClelland, IBM
Ragnar Erlandsson, IBM
Shirley Chiang, IBM

La Jolla, CA

12:00 AM

Measurement of Semiconductor Transport Properties Using Scanned Modulated Reflectance

Section: Electronic Materials and Devices

F. Alan Mcdonald, IBM
D. Guidotti, IBM
T. M. DelGiudice, IBM

La Jolla, CA

12:00 AM

Nondestructive Characterization of Polishing Damage in Silicon Wafers Using Modulated Reflectance Mapping

Section: Electronic Materials and Devices

W. Lee Smith, Therma-Wave, Inc.
Sookap Hahn, Siltec Corporation
Margareth Arst, Signetics Corporation

La Jolla, CA

12:00 AM

Nondestructive Submicron Dimensional Metrology Using the Scanning Electron Microscope

Section: Electronic Materials and Devices

Michael T. Postek, National Bureau of Standards

La Jolla, CA

12:00 AM

Room Temperature Photo-Luminescence Imaging of Dislocations in GaAs Wafers

Section: Electronic Materials and Devices

D. Guidotti, IBM
H. J. Hovel, IBM
M. Albert, IBM
J. Becker, IBM

La Jolla, CA

12:00 AM

Scanning Differential Contrast Microscopy

Section: Electronic Materials and Devices

G. S. Kino, Stanford University
C.-H. Chou, Stanford University
T. R. Corle, Stanford University
P. C. D. Hobbs, Stanford University

La Jolla, CA

12:00 AM

Thermal and Plasma Waves in Semiconductors

Section: Electronic Materials and Devices

Jon Opsal, Therma-Wave, Inc.

La Jolla, CA

12:00 AM

Thermal Wave Characterization of Coated Surfaces

Section: Electronic Materials and Devices

J. Jaarinen, Wayne State University
C. B. Reyes, Wayne State University
I. C. Oppenheim, Wayne State University
L. D. Favro, Wayne State University
P. K. Kuo, Wayne State University
R. L. Thomas, Wayne State University

La Jolla, CA

12:00 AM