Location

Williamsburg, VA

Start Date

1-1-1988 12:00 AM

Description

Standard methods for measuring solid-state device and circuit performance are inadequate at GHz speeds because they introduce parasitic inductances and capacitances that change circuit operation and characteristics. One promising noninvasive procedure that avoids these problems uses electro-optic probing to yield information on device packaging techniques; and on device and circuit performance characteristics such as voltage waveforms, timing, and propagation delays in both analog and digital circuits.

Book Title

Review of Progress in Quantitative Nondestructive Evaluation

Volume

7B

Chapter

Chapter 6: Electronic Materials and Devices

Pages

1133-1140

DOI

10.1007/978-1-4613-0979-6_31

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

Sub-Bandgap Laser Probing of GaAs Devices and Circuits

Williamsburg, VA

Standard methods for measuring solid-state device and circuit performance are inadequate at GHz speeds because they introduce parasitic inductances and capacitances that change circuit operation and characteristics. One promising noninvasive procedure that avoids these problems uses electro-optic probing to yield information on device packaging techniques; and on device and circuit performance characteristics such as voltage waveforms, timing, and propagation delays in both analog and digital circuits.